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BSS192,115

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BSS192,115

MOSFET P-CH 240V 200MA SOT89

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. MOSFET BSS192-115 is a P-Channel device with a Drain-Source Voltage (Vdss) of 240V and a continuous Drain current (Id) of 200mA at 25°C (Ta). This surface mount component, packaged in SOT-89 (TO-243AA), offers a maximum power dissipation of 560mW (Ta) and 12.5W (Tc). The Rds On is specified at 12 Ohm maximum at 200mA and 10V Vgs. Key parameters include a Vgs(th) of 2.8V (max) at 1mA and an input capacitance (Ciss) of 90 pF (max) at 25V. The operating temperature range is -55°C to 150°C (TJ), with a Vgs limit of ±20V. This device is suitable for applications in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Rds On (Max) @ Id, Vgs12Ohm @ 200mA, 10V
FET Feature-
Power Dissipation (Max)560mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id2.8V @ 1mA
Supplier Device PackageSOT-89
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)240 V
Input Capacitance (Ciss) (Max) @ Vds90 pF @ 25 V

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