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BSS123/LF1R

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BSS123/LF1R

MOSFET N-CH 100V 150MA TO236AB

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ BSS123-LF1R is a surface-mount N-channel MOSFET designed for general-purpose switching applications. This component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 150mA at 25°C. The Rds On is specified at a maximum of 6 Ohm when driven at 10V with 120mA. Key parameters include an input capacitance (Ciss) of 40 pF at 25 V and a gate-source threshold voltage (Vgs(th)) of 2.8V at 1mA. The device operates across a temperature range of -55°C to 150°C and is housed in a TO-236AB package, commonly known as SOT-23. This MOSFET is delivered in Tape & Reel (TR) packaging. Its specifications make it suitable for use in consumer electronics and industrial automation.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C150mA (Ta)
Rds On (Max) @ Id, Vgs6Ohm @ 120mA, 10V
FET Feature-
Power Dissipation (Max)250mW (Ta)
Vgs(th) (Max) @ Id2.8V @ 1mA
Supplier Device PackageTO-236AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds40 pF @ 25 V

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