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BSP230,135

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BSP230,135

MOSFET P-CH 300V 210MA SOT223

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. BSP230-135 is a P-Channel MOSFET designed for demanding applications requiring high voltage and precise control. This component features a 300V drain-to-source voltage (Vdss) and a continuous drain current of 210mA at 25°C, with a maximum power dissipation of 1.5W. With an Rds(on) of 17Ohm at 170mA and 10V Vgs, it offers efficient switching characteristics. The input capacitance (Ciss) is a maximum of 90pF at 25V. The device is housed in a SOT-223 (TO-261-4, TO-261AA) surface mount package and operates reliably up to 150°C junction temperature. Its ±20V gate-source voltage tolerance and a gate threshold voltage (Vgs(th)) of 2.55V at 1mA make it suitable for power management and control circuits in industries such as industrial automation and consumer electronics. The component is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C210mA (Ta)
Rds On (Max) @ Id, Vgs17Ohm @ 170mA, 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Vgs(th) (Max) @ Id2.55V @ 1mA
Supplier Device PackageSOT-223
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)300 V
Input Capacitance (Ciss) (Max) @ Vds90 pF @ 25 V

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