BSP225,115
MOSFET P-CH 250V 225MA SOT223Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. P-Channel MOSFET, part number BSP225-115, offers a 250 V drain-source voltage and a continuous drain current of 225 mA at 25°C. This device features a 1.5 W maximum power dissipation and a typical Rds On of 15 Ohms at 200 mA and 10 V gate-source voltage. The input capacitance (Ciss) is a maximum of 90 pF at 25 V. Designed for surface mounting in a SOT-223 (TO-261-4, TO-261AA) package, it operates at temperatures up to 150°C. This MOSFET is suitable for applications in power management and high-voltage switching circuits within industries such as industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 225mA (Ta) |
| Rds On (Max) @ Id, Vgs | 15Ohm @ 200mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Input Capacitance (Ciss) (Max) @ Vds | 90 pF @ 25 V |
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