BSP220,115
MOSFET P-CH 200V 225MA SOT223Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. BSP220-115 is a P-Channel MOSFET designed for robust performance in demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous drain current (Id) of 225mA (Ta) at 25°C. With a maximum power dissipation of 1.5W (Ta), it is suitable for power switching and control circuits. The Rds On is specified at a maximum of 12 Ohms at 200mA and 10V. The component is housed in a SOT-223 package (TO-261-4, TO-261AA) and is supplied on Tape & Reel. Key parameters include an input capacitance (Ciss) of 90 pF @ 25 V and a gate-source threshold voltage (Vgs(th)) of 2.8V @ 1mA. Its operating temperature range extends to 150°C (TJ). This MOSFET is commonly utilized in industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 225mA (Ta) |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 200mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 90 pF @ 25 V |
Request a Quote
Clients Also Buy
PMV48XP/MIR
MOSFET P-CH 20V 3.5A TO236AB
BUK9Y07-30B,115
MOSFET N-CH 30V 75A LFPAK56
PSMN1R0-30YLDX
MOSFET N-CH 30V 100A LFPAK56
