BSP130,115
MOSFET N-CH 300V 350MA SOT223Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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The Nexperia BSP130-115 is an N-Channel MOSFET designed for demanding applications. This component features a 300V drain-to-source voltage (Vdss) and can handle a continuous drain current (Id) of 350mA at 25°C. With a maximum power dissipation of 1.5W (Ta) and a low on-resistance (Rds On) of 6 Ohms at 250mA and 10V gate-source voltage, it offers efficient power switching. The SOT-223 package (TO-261-4, TO-261AA) facilitates surface mounting. Operating across a wide temperature range of -55°C to 150°C, this MOSFET is suitable for use in industrial and consumer electronics. Key electrical characteristics include a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 2V at 1mA. Input capacitance (Ciss) is specified at a maximum of 120 pF at 25V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 250mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 25 V |
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