BSP122,115
MOSFET N-CH 200V 550MA SOT223Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia's BSP122-115 is an N-Channel power MOSFET designed for demanding applications. This component features a 200V drain-source breakdown voltage and a continuous drain current capability of 550mA at 25°C ambient temperature. The Nexperia BSP122-115 offers a low on-resistance specification of 2.5 Ohms maximum at 750mA and 10V Vgs, ensuring efficient power transfer. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.5W. The device is housed in a SOT-223 (TO-261-4) surface-mount package, ideal for compact designs in industrial automation, consumer electronics, and power management systems. Input capacitance (Ciss) is rated at a maximum of 100 pF at 25V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 550mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 750mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 25 V |