BSP110,115
MOSFET N-CH 100V 520MA SOT223Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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The Nexperia USA Inc. BSP110-115 is an N-Channel TrenchMOS™ MOSFET designed for high-performance switching applications. This component features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 520mA at 25°C (Tc). With a maximum power dissipation of 6.25W (Tc), it is suitable for demanding thermal environments. The device exhibits a maximum Rds(On) of 10 Ohms at 150mA and 5V Vgs, with a gate-source threshold voltage (Vgs(th)) of 2V at 1mA. Input capacitance (Ciss) is rated at 40pF maximum at 10V. The BSP110-115 is housed in a SOT-223 (TO-261-4, TO-261AA) surface mount package, supplied on tape and reel. Its operating temperature range is -65°C to 150°C. This MOSFET is typically utilized in consumer electronics, industrial controls, and power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 520mA (Tc) |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 150mA, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V |
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