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BSP030,115

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BSP030,115

MOSFET N-CH 30V 10A SOT223

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ N-Channel MOSFET (Part Number: BSP030-115). This surface-mount device features a 30V drain-source voltage and a continuous drain current of 10A at 25°C (Tc). It offers a maximum on-resistance of 30mOhm at 5A and 10V, with a drive voltage range from 4.5V to 10V. The BSP030-115 has a maximum power dissipation of 8.3W (Tc) and is housed in a SOT-223 package, supplied on tape and reel. Key electrical parameters include a gate charge of 40nC (max) at 10V and input capacitance of 770pF (max) at 24V. This component is suitable for applications in automotive, industrial, and consumer electronics. Operating temperature range is -65°C to 150°C (TJ).

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Rds On (Max) @ Id, Vgs30mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)8.3W (Tc)
Vgs(th) (Max) @ Id2.8V @ 1mA
Supplier Device PackageSOT-223
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds770 pF @ 24 V

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