BSN20,215
MOSFET N-CH 50V 173MA TO236ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ N-channel MOSFET, part number BSN20-215, is designed for high-efficiency switching applications. This surface mount device features a Drain-Source Voltage (Vdss) of 50V and a continuous Drain current (Id) of 173mA at 25°C. The BSN20-215 offers a maximum On-Resistance (Rds On) of 15 Ohms at 100mA and 10V gate-source voltage. Key parameters include a Vgs(th) of 1V at 1mA and an input capacitance (Ciss) of 25 pF at 10V. The component operates within a temperature range of -65°C to 150°C (TJ) and is supplied in a TO-236AB package, commonly known as SOT-23-3. Power dissipation is rated at 830mW (Tc). This MOSFET is suitable for use in various industrial and consumer electronics sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 173mA (Ta) |
| Rds On (Max) @ Id, Vgs | 15Ohm @ 100mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | TO-236AB |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Input Capacitance (Ciss) (Max) @ Vds | 25 pF @ 10 V |
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