BSH114,215
MOSFET N-CH 100V 500MA TO236ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ BSH114-215 is an N-channel MOSFET designed for surface-mount applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 500mA at 25°C (Ta). The On-Resistance (Rds On) is specified at a maximum of 500mOhm at 500mA and 10V gate drive. With a maximum Gate Charge (Qg) of 4.6 nC at 10V and an input capacitance (Ciss) of 138pF at 25V, this device is suitable for various switching applications. The power dissipation is rated at 360mW (Ta) and 830mW (Tc). The device is housed in a TO-236AB package and operates within a temperature range of -55°C to 150°C. It is commonly utilized in consumer electronics and industrial automation.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta), 830mW (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-236AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 138 pF @ 25 V |
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