BSH111,235
MOSFET N-CH 55V 335MA TO236ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ BSH111-235 is an N-Channel MOSFET designed for surface-mount applications. This component features a Drain-Source Voltage (Vdss) of 55 V and a continuous drain current (Id) of 335mA at 25°C (Ta). The device exhibits a maximum on-resistance (Rds On) of 4 Ohms at 500mA and 4.5V gate-source voltage. Key parameters include a gate charge (Qg) of 1 nC at 8V and input capacitance (Ciss) of 40 pF at 10V. The MOSFET is housed in a TO-236AB package, also known as SC-59 or SOT-23-3, and is supplied on tape and reel. With a maximum power dissipation of 830mW at 25°C (Tc), it is suitable for use in consumer electronics and industrial control systems. The operating temperature range is -65°C to 150°C.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 335mA (Ta) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 500mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Tc) |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Supplier Device Package | TO-236AB |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 1 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V |
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