BSH108,215
MOSFET N-CH 30V 1.9A TO236ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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The Nexperia USA Inc. BSH108-215 is an N-Channel TrenchMOS™ MOSFET designed for efficient switching applications. This surface mount component, housed in a TO-236AB package, offers a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 1.9A at 25°C. Key electrical characteristics include a maximum on-resistance (Rds On) of 120mOhm at 1A and 10V, and a gate charge (Qg) of 10 nC at 10V. The device supports drive voltages between 5V and 10V, with a maximum gate-source voltage (Vgs) of ±20V. Power dissipation is rated at 830mW (Tc). Operating across a wide temperature range of -65°C to 150°C, this MOSFET is suitable for use in consumer electronics, industrial automation, and automotive systems. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-236AB |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 10 V |
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