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BSH103,215

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BSH103,215

MOSFET N-CH 30V 850MA TO236AB

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Nexperia BSH103-215 is a surface-mount N-Channel MOSFET housed in a TO-236AB (SC-59) package. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 850mA at 25°C ambient. With a maximum On-Resistance (Rds On) of 400mOhm at 500mA and 4.5V Vgs, it offers efficient switching. The gate threshold voltage (Vgs(th)) is a nominal 400mV at 1mA. Input capacitance (Ciss) is rated at 83pF maximum at 24V, with a gate charge (Qg) of 2.1nC at 4.5V. Power dissipation is 540mW ambient. Operating temperature range is -55°C to 150°C. This component is commonly utilized in consumer electronics and industrial applications requiring compact, efficient switching solutions. It is supplied on Tape & Reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C850mA (Ta)
Rds On (Max) @ Id, Vgs400mOhm @ 500mA, 4.5V
FET Feature-
Power Dissipation (Max)540mW (Ta)
Vgs(th) (Max) @ Id400mV @ 1mA (Min)
Supplier Device PackageTO-236AB
Drive Voltage (Max Rds On, Min Rds On)2.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds83 pF @ 24 V

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