2N7002F,215
MOSFET N-CH 60V 475MA TO236ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. presents the 2N7002F-215, an N-Channel TrenchMOS™ MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 475mA at 25°C, with a maximum power dissipation of 830mW (Ta). The Rds On is specified at a maximum of 2 Ohms at 500mA and 10V gate-source voltage. Key capacitive parameters include a maximum input capacitance (Ciss) of 50 pF at 10V and a maximum gate charge (Qg) of 0.69 nC at 10V. The device operates across a temperature range of -55°C to 150°C. Packaged in a TO-236AB (SC-59, SOT-23-3) surface-mount configuration and supplied on tape and reel, this MOSFET is suitable for use in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 475mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-236AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 10 V |
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