2N7002E,215
MOSFET N-CH 60V 385MA TO236ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ N-Channel MOSFET, part number 2N7002E-215, offers a 60V drain-source breakdown voltage and a continuous drain current of 385mA at 25°C ambient. This surface mount device, housed in a TO-236AB package, features a maximum on-resistance of 3 Ohms at 500mA drain current and 10V gate-source voltage. The Nexperia 2N7002E-215 exhibits a typical gate charge of 0.69 nC and an input capacitance of 50 pF. Its robust design supports a maximum power dissipation of 830mW ambient and operates across a wide temperature range of -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 385mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-236AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 10 V |
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