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2N7002CK,215

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2N7002CK,215

MOSFET N-CH 60V 300MA TO236AB

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. TrenchMOS™ 2N7002CK-215 is an N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 300mA at 25°C. The Rds On is specified at a maximum of 1.6 Ohms when operating at 500mA and 10V. With a maximum power dissipation of 350mW (Ta) and an operating junction temperature of 150°C, it is suitable for environments requiring robust thermal performance. The device offers low input capacitance (Ciss) of 55pF at 25V and a gate charge (Qg) of 1.3nC at 4.5V. Packaged in a TO-236AB (SC-59) surface mount configuration and supplied on tape and reel, the 2N7002CK-215 is AEC-Q101 qualified, indicating its suitability for automotive applications.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
Rds On (Max) @ Id, Vgs1.6Ohm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-236AB
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds55 pF @ 25 V
QualificationAEC-Q101

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