2N7002BKMB,315
MOSFET N-CH 60V 450MA DFN1006B-3Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc.'s 2N7002BKMB-315 is an N-Channel MOSFET designed for high-performance switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain current (Id) of 450mA at 25°C, with a maximum power dissipation of 360mW (Ta). Its On-Resistance (Rds On) is specified as a maximum of 1.6 Ohms at 450mA and 10V gate drive. The device utilizes Metal Oxide technology and is housed in a compact DFN1006B-3 surface-mount package, supplied on tape and reel. Key electrical parameters include a Gate Charge (Qg) of 0.6 nC at 4.5V and an Input Capacitance (Ciss) of 50 pF at 10V. The operating temperature range for this MOSFET is -55°C to 150°C (TJ). This component finds application in various electronic systems, including industrial controls and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 450mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 450mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | DFN1006B-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 10 V |
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