2N7002BKM,315
MOSFET N-CH 60V 450MA DFN1006-3Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel MOSFET, part number 2N7002BKM-315, is designed for high-efficiency switching applications. This AEC-Q101 qualified component features a 60V drain-source voltage and a continuous drain current of 450mA at 25°C ambient. The on-resistance is specified at a maximum of 1.6 Ohms at 500mA and 10V gate-source voltage. With a maximum power dissipation of 360mW (Ta) and an operating junction temperature of 150°C, it is suitable for demanding automotive environments. The device utilizes a DFN1006-3 (SOT-883) surface-mount package, offering a compact footprint. Key electrical characteristics include a typical input capacitance of 50pF at 10V drain-source voltage and a gate charge of 0.6nC at 4.5V gate-source voltage.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 450mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | SOT-883 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 10 V |
| Qualification | AEC-Q101 |
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