PMEG4010ESBZ
DIODE SCHOTTKY 40V 1A DSN1006-2Manufacturer: Nexperia USA Inc.
Categories: Single Diodes
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The Nexperia USA Inc. PMEG4010ESBZ is a Schottky diode designed for high-efficiency rectification in demanding applications. This component features a 40V reverse voltage rating and a 1A average rectified current capability. Its low forward voltage drop of 610mV at 1A minimizes power loss, crucial for optimizing energy consumption. The fast reverse recovery time of 2.9ns ensures efficient switching performance. With a low reverse leakage current of 40µA at 40V and a junction operating temperature up to 150°C, the PMEG4010ESBZ offers robust performance. The device is supplied in a compact DSN1006-2 (2-XDFN) package, ideal for space-constrained designs, and is available on tape and reel. This diode is widely utilized in power management, automotive, and industrial electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 2-XDFN |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2.9 ns |
| Technology | Schottky |
| Capacitance @ Vr, F | 22pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DSN1006-2 |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) @ If | 610 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 40 V |
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