PMEG4010AESBZ
DIODE SCHOTTKY 40V 1A DSN1006-2Manufacturer: Nexperia USA Inc.
Categories: Single Diodes
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The Nexperia PMEG4010AESBZ is a Schottky diode designed for surface mount applications. This component features a maximum DC reverse voltage (Vr) of 40 V and a forward voltage (Vf) of 505 mV at 1 A. With an average rectified forward current (Io) of 1 A, it exhibits a low reverse leakage of 1.25 mA at 40 V and a reverse recovery time (trr) of 3.1 ns. The diode's capacitance is 22 pF at 10 V and 1 MHz. Packaged in a compact DSN1006-2 (2-XDFN) format, suitable for tape and reel, this fast-switching device is engineered for high efficiency in power management circuits, automotive applications, and general-purpose rectification where low forward voltage drop and fast switching speeds are critical. The maximum operating junction temperature is 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 2-XDFN |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 3.1 ns |
| Technology | Schottky |
| Capacitance @ Vr, F | 22pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DSN1006-2 |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) @ If | 505 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1.25 mA @ 40 V |
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