PMEG3010AESBZ
DIODE SCHOTTKY 30V 1A DSN1006-2Manufacturer: Nexperia USA Inc.
Categories: Single Diodes
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Nexperia USA Inc. PMEG3010AESBZ is a Schottky diode designed for high-frequency applications. This component features a reverse voltage rating of 30V and a forward current capability of 1A. With a low forward voltage of 480mV at 1A and a reverse leakage of 1.25mA at 30V, it offers efficient power handling. The diode exhibits a reverse recovery time of 3.5ns, classifying it as fast recovery. Its junction capacitance is specified at 32pF at 10V and 1MHz, and it operates over a junction temperature range of up to 150°C. The PMEG3010AESBZ is housed in a compact DSN1006-2 package, suitable for surface mounting. This device is commonly utilized in power management, consumer electronics, and automotive applications requiring efficient rectification and low power loss. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 2-XDFN |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 3.5 ns |
| Technology | Schottky |
| Capacitance @ Vr, F | 32pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DSN1006-2 |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 480 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1.25 mA @ 30 V |
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