PMEG200G20ELPX
DIODE SIGE 200V 2A SOD128/CFP5Manufacturer: Nexperia USA Inc.
Categories: Single Diodes
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Nexperia USA Inc. PMEG200G20ELPX is a Silicon Germanium (SiGe) fast recovery diode. This surface mount component, housed in a SOD-128/CFP5 package, offers a 200V reverse voltage capability and a 2A average rectified forward current (Io). Key specifications include a forward voltage drop (Vf) of 880mV at 2A, a reverse leakage current of 30nA at 200V, and a specified reverse recovery time (trr) of 32ns. Its capacitance at 1V and 1MHz is 58pF. Designed for high-temperature operation up to 175°C, this diode is suitable for applications in automotive, industrial, and telecommunications sectors requiring efficient power management and fast switching characteristics. The component is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-128 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 32 ns |
| Technology | SiGe (Silicon Germanium) |
| Capacitance @ Vr, F | 58pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | SOD-128/CFP5 |
| Operating Temperature - Junction | 175°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 880 mV @ 2 A |
| Current - Reverse Leakage @ Vr | 30 nA @ 200 V |