PMEG200G20ELP-QX
DIODE SIGE 200V 2A SOD128/CFP5Manufacturer: Nexperia USA Inc.
Categories: Single Diodes
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Nexperia USA Inc. PMEG200G20ELP-QX is a Silicon Germanium (SiGe) Schottky diode designed for demanding applications. This automotive-grade component, qualified to AEC-Q101, features a 200V reverse voltage rating and a 2A average rectified forward current (Io). Its fast recovery characteristic, with a typical reverse recovery time (trr) of 32ns, makes it suitable for high-frequency switching. The diode exhibits a low forward voltage drop of 880mV at 2A and a minimal reverse leakage current of 30nA at 200V. With a junction operating temperature up to 175°C and a low capacitance of 58pF at 1V, the PMEG200G20ELP-QX is ideal for power management, automotive electronics, and high-efficiency power supplies. It is supplied in a SOD-128/CFP5 package on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-128 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 32 ns |
| Technology | SiGe (Silicon Germanium) |
| Capacitance @ Vr, F | 58pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | SOD-128/CFP5 |
| Operating Temperature - Junction | 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 880 mV @ 2 A |
| Current - Reverse Leakage @ Vr | 30 nA @ 200 V |
| Qualification | AEC-Q101 |