PMEG200G10ELR-QX
DIODE GEN PURP 200V 1A SOD123WManufacturer: Nexperia USA Inc.
Categories: Single Diodes
Quality Control: Learn More
The Nexperia PMEG200G10ELR-QX is a general-purpose diode designed for high-reliability applications. This silicon germanium (SiGe) component features a 200V reverse voltage (Vr) and a 1A average rectified forward current (Io). With a forward voltage (Vf) of 880mV at 1A and a fast reverse recovery time (trr) of 34ns, it is suitable for demanding switching applications. The diode exhibits a low reverse leakage current of 30nA at 200V and a junction capacitance of 29pF at 1V and 1MHz. Packaged in a compact SOD-123W surface mount configuration and supplied on tape and reel (TR), the PMEG200G10ELR-QX is AEC-Q101 qualified and rated for automotive grade operation up to a junction temperature of 175°C. Its performance characteristics make it a viable selection for automotive systems and industrial power applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-123W |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 34 ns |
| Technology | SiGe (Silicon Germanium) |
| Capacitance @ Vr, F | 29pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | SOD-123W |
| Operating Temperature - Junction | 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 880 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 30 nA @ 200 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
ES1DRX
DIODE GEN PURP 200V 1A SOD123W
BAS16J,115
DIODE GP 100V 250MA SOD323F
BAS521,315
DIODE GEN PURP 300V 250MA SOD523
