PMEG150G20ELP-QX
DIODE SIGE 150V 2A SOD128/CFP5Manufacturer: Nexperia USA Inc.
Categories: Single Diodes
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Nexperia USA Inc. PMEG150G20ELP-QX is a Silicon Germanium (SiGe) Schottky diode designed for high-performance applications. This surface mount component, housed in a SOD-128/CFP5 package, offers a reverse voltage of 150V and a maximum forward current of 2A. Its fast recovery characteristic, with a typical trr of 14 ns, makes it suitable for demanding switching applications. The diode exhibits low leakage current, rated at 30 nA at 150V, and a forward voltage drop of 850 mV at 2A. With a junction operating temperature of 175°C and AEC-Q101 qualification, this device is engineered for reliability in the automotive sector. The capacitance at 1V and 1MHz is 70pF. It is supplied on tape and reel for efficient assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-128 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 14 ns |
| Technology | SiGe (Silicon Germanium) |
| Capacitance @ Vr, F | 70pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | SOD-128/CFP5 |
| Operating Temperature - Junction | 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 850 mV @ 2 A |
| Current - Reverse Leakage @ Vr | 30 nA @ 150 V |
| Qualification | AEC-Q101 |