PMEG150G10ELR-QX
DIODE GEN PURP 150V 1A SOD123WManufacturer: Nexperia USA Inc.
Categories: Single Diodes
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Nexperia USA Inc. PMEG150G10ELR-QX is a general-purpose diode designed for demanding applications. This surface-mount device, housed in an SOD-123W package, offers a maximum reverse voltage of 150 V and an average rectified forward current capability of 1 A. Featuring a fast recovery time (trr) of 15 ns and a forward voltage (Vf) of 850 mV at 1 A, this SiGe technology diode exhibits low leakage current, specified at 30 nA at 150 V. Its capacitance at 1V, 1MHz is 34pF. Operating up to a junction temperature of 175°C and qualified to AEC-Q101 for automotive applications, the PMEG150G10ELR-QX is suitable for use in automotive electronics and power management systems. The component is supplied on tape and reel (TR) for efficient manufacturing processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-123W |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 15 ns |
| Technology | SiGe (Silicon Germanium) |
| Capacitance @ Vr, F | 34pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | SOD-123W |
| Operating Temperature - Junction | 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 850 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 30 nA @ 150 V |
| Qualification | AEC-Q101 |