PMEG120G30ELPX
DIODE SIGE 120V 3A SOD128/CFP5Manufacturer: Nexperia USA Inc.
Categories: Single Diodes
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Nexperia USA Inc. PMEG120G30ELPX. This Silicon Germanium (SiGe) diode is designed for fast switching applications, featuring a reverse recovery time (trr) of 11 ns. It offers an average rectified current (Io) of 3A and a maximum DC reverse voltage (Vr) of 120V. The forward voltage (Vf) is a maximum of 840 mV at 3A. Leakage current at its rated reverse voltage is a low 30 nA at 120V. The component exhibits a junction capacitance of 103pF at 1V and 1MHz. Packaged in a SOD-128/CFP5 for surface mount applications, this diode operates at junction temperatures up to 175°C (Max). It is supplied on tape and reel (TR) and finds application in power management and high-frequency switching circuits within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-128 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 11 ns |
| Technology | SiGe (Silicon Germanium) |
| Capacitance @ Vr, F | 103pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | SOD-128/CFP5 |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 120 V |
| Voltage - Forward (Vf) (Max) @ If | 840 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 30 nA @ 120 V |