PMEG120G30ELPJ
DIODE SIGE 120V 3A SOD128/CFP5Manufacturer: Nexperia USA Inc.
Categories: Single Diodes
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Nexperia USA Inc. PMEG120G30ELPJ is a Silicon Germanium (SiGe) rectifier diode designed for demanding applications. This surface mount component, housed in a SOD-128/CFP5 package, offers a maximum repetitive reverse voltage (Vr) of 120 V and an average rectified forward current (Io) of 3 A. It exhibits a low forward voltage drop (Vf) of 840 mV at 3 A and a reverse leakage current of only 30 nA at its rated reverse voltage. With a fast reverse recovery time (trr) of 11 ns, this diode is suitable for high-frequency switching applications. Its low capacitance of 103 pF at 1V and 1MHz, coupled with a maximum junction operating temperature of 175°C, makes it a robust solution for power management, automotive, and industrial electronics. The component is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-128 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 11 ns |
| Technology | SiGe (Silicon Germanium) |
| Capacitance @ Vr, F | 103pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | SOD-128/CFP5 |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 120 V |
| Voltage - Forward (Vf) (Max) @ If | 840 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 30 nA @ 120 V |
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