PMEG120G20ELRZ
DIODE SIGE 120V 2A CFP3Manufacturer: Nexperia USA Inc.
Categories: Single Diodes
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Nexperia USA Inc. PMEG120G20ELRZ is a fast-switching Germanium (SiGe) diode designed for high-performance applications. This surface mount component, packaged in a CFP3 (SOD-123W) footprint, offers a DC Reverse Voltage (Vr) of 120V and an Average Rectified Current (Io) of 2A. Key specifications include a low forward voltage (Vf) of 840mV at 2A and a reverse leakage current of just 30nA at 120V. The diode exhibits a reverse recovery time (trr) of 6ns, classifying it as a fast recovery device. Its low capacitance of 75pF at 1V and maximum junction operating temperature of 175°C make it suitable for demanding applications in automotive, industrial, and consumer electronics sectors requiring efficient power management and signal switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-123W |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 1A (Io) |
| Reverse Recovery Time (trr) | 6 ns |
| Technology | SiGe (Silicon Germanium) |
| Capacitance @ Vr, F | 75pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | CFP3 |
| Operating Temperature - Junction | 175°C |
| Voltage - DC Reverse (Vr) (Max) | 120 V |
| Voltage - Forward (Vf) (Max) @ If | 840 mV @ 2 A |
| Current - Reverse Leakage @ Vr | 30 nA @ 120 V |
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