PMEG120G20ELRX
DIODE SIGE 120V 2A SOD123WManufacturer: Nexperia USA Inc.
Categories: Single Diodes
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Nexperia USA Inc. PMEG120G20ELRX is a Silicon Germanium (SiGe) diode designed for high-efficiency rectification. This fast-recovery diode features a maximum forward voltage (Vf) of 840 mV at 2 A and a reverse leakage current of only 30 nA at its maximum reverse voltage of 120 V. With an average rectified forward current (Io) of 2 A and a reverse recovery time (trr) of 11 ns, it is suitable for applications requiring rapid switching and minimal power loss. The capacitance at 1V and 1MHz is 75pF. The component operates at junction temperatures up to 175°C (Max). It is housed in a compact SOD-123W surface-mount package and supplied on tape and reel. This diode is commonly utilized in power supply circuits, switching regulators, and general-purpose rectification within the automotive and industrial electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-123W |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 11 ns |
| Technology | SiGe (Silicon Germanium) |
| Capacitance @ Vr, F | 75pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | SOD-123W |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 120 V |
| Voltage - Forward (Vf) (Max) @ If | 840 mV @ 2 A |
| Current - Reverse Leakage @ Vr | 30 nA @ 120 V |
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