PMEG120G10ELRZ
DIODE SIGE 120V 1A CFP3Manufacturer: Nexperia USA Inc.
Categories: Single Diodes
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Nexperia USA Inc. presents the PMEG120G10ELRZ, a high-performance Silicon Germanium (SiGe) diode. This surface mount component, packaged in a SOD-123W (CFP3), offers a 1A average rectified current (Io) and a maximum DC reverse voltage (Vr) of 120V. Featuring a fast recovery time of 6 ns, it is suitable for applications requiring rapid switching. The forward voltage (Vf) is rated at 840 mV at 1A, with a low reverse leakage current of 30 nA at 120V. The junction capacitance is 36pF at 1V and 1MHz. This device operates over a junction temperature range of -55°C to 175°C and is supplied in Tape & Reel (TR) packaging. The PMEG120G10ELRZ finds application in power management, high-frequency switching, and general-purpose rectification within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-123W |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 6 ns |
| Technology | SiGe (Silicon Germanium) |
| Capacitance @ Vr, F | 36pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | CFP3 |
| Operating Temperature - Junction | 175°C |
| Voltage - DC Reverse (Vr) (Max) | 120 V |
| Voltage - Forward (Vf) (Max) @ If | 840 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 30 nA @ 120 V |
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