PMEG120G10ELR-QX
DIODE GEN PURP 120V 1A SOD123WManufacturer: Nexperia USA Inc.
Categories: Single Diodes
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Nexperia USA Inc. PMEG120G10ELR-QX is a Silicon Germanium general-purpose diode designed for robust performance. Featuring a 120V reverse voltage and a 1A average rectified current (Io), this device offers low leakage current of 30 nA at 120V. The PMEG120G10ELR-QX boasts a fast recovery time (trr) of 12 ns and a forward voltage (Vf) of 840 mV at 1A. Its junction capacitance is rated at 36pF at 1V. Packaged in a compact SOD-123W surface-mount format and supplied on tape and reel, this component is AEC-Q101 qualified and operates within a junction temperature range of -65°C to 175°C. It is suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-123W |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 12 ns |
| Technology | SiGe (Silicon Germanium) |
| Capacitance @ Vr, F | 36pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | SOD-123W |
| Operating Temperature - Junction | 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 120 V |
| Voltage - Forward (Vf) (Max) @ If | 840 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 30 nA @ 120 V |
| Qualification | AEC-Q101 |
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