1N4448,133
DIODE GEN PURP 100V 200MA ALF2Manufacturer: Nexperia USA Inc.
Categories: Single Diodes
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Nexperia USA Inc. 1N4448-133 is a general-purpose silicon rectifier diode with a maximum repetitive peak reverse voltage of 100V. This axial-leaded device, packaged in DO-204AH (DO-35), offers an average rectified forward current handling capability of 200mA. Key electrical characteristics include a forward voltage drop of 1V at 100mA and a low reverse leakage current of 25nA at 20V. The diode features a fast reverse recovery time of 4ns, making it suitable for high-frequency applications, and a junction operating temperature up to 200°C. Its low capacitance of 4pF at 0V and 1MHz further enhances its utility in signal processing. This component finds application in consumer electronics, automotive systems, and industrial control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | DO-204AH, DO-35, Axial |
| Mounting Type | Through Hole |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 4pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | ALF2 |
| Operating Temperature - Junction | 200°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 25 nA @ 20 V |
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