PBSS5612PA,115
TRANS PNP 12V 6A 3HUSONManufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia USA Inc. PNP Bipolar Junction Transistor (BJT), part number PBSS5612PA-115, offers robust performance for demanding applications. This surface mount device features a collector current (Ic) capability of up to 6A and a collector-emitter breakdown voltage (Vce) of 12V. With a minimum DC current gain (hFE) of 190 at 2A and 2V, and a transition frequency of 60MHz, it is well-suited for power switching and amplification circuits. The low saturation voltage (Vce(sat)) of 300mV at 300mA and 6A, coupled with a maximum power dissipation of 2.1W, ensures efficient operation. The 3-HUSON (2x2) package, supplied on tape and reel, is commonly found in automotive, industrial control, and consumer electronics sectors. The device operates at temperatures up to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-PowerUDFN |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 300mA, 6A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 190 @ 2A, 2V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | 3-HUSON (2x2) |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 2.1 W |
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