PBSS5540Z/ZLF
TRANS PNP 40V 5A SOT223Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia USA Inc. presents the PBSS5540Z-ZLF, a PNP bipolar junction transistor (BJT) designed for demanding applications. This device offers a collector emitter breakdown voltage (Vce) of 40V and a continuous collector current (Ic) capability of 5A, making it suitable for power switching and amplification tasks. Featuring a transition frequency (fT) of 120MHz and a maximum power dissipation of 2W, it excels in various industrial automation, automotive, and consumer electronics systems. The PBSS5540Z-ZLF is packaged in a SOT-223 (TO-261-4, TO-261AA) surface mount configuration, supplied on tape and reel for efficient board assembly. Key parameters include a minimum DC current gain (hFE) of 150 at 2A/2V and a low Vce(sat) of 160mV at 200mA/2A. The maximum collector cutoff current (Icbo) is rated at 100nA, and it operates across an extended temperature range up to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 160mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 2A, 2V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | SOT-223 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 2 W |
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