PBSS5350Z/ZLF
TRANS PNP 50V 3A SOT223Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia's PBSS5350Z-ZLF is a PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This surface-mount device, housed in a SOT-223 package, features a 50V collector-emitter breakdown voltage and a continuous collector current capability of 3A. It offers a minimum DC current gain (hFE) of 200 at 1A and 2V, with a transition frequency of 100MHz. The maximum power dissipation is rated at 2W, and it operates efficiently up to a junction temperature of 150°C. Key specifications include a Vce(sat) of 300mV at 200mA/2A and a low collector cutoff current of 100nA. This component is well-suited for power management, switching, and amplification circuits across various industries, including automotive and industrial electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-223 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 2 W |
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