PBSS5240V,115
TRANS PNP 40V 1.8A SOT666Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia USA Inc. PBSS5240V-115 is a PNP bipolar junction transistor designed for surface mount applications. This component features a breakdown voltage of 40V and a maximum continuous collector current of 1.8A. With a transition frequency of 150MHz and a maximum power dissipation of 900mW, it offers a minimum DC current gain (hFE) of 300 at 100mA and 5V. The saturation voltage (Vce(sat)) is a maximum of 530mV at 200mA collector current and 2A base current. The transistor operates within a temperature range of -40°C to 150°C (TJ) and is supplied in a SOT-666 package, presented on a Tape & Reel (TR). This device is commonly utilized in consumer electronics, industrial automation, and automotive applications requiring efficient switching and amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 530mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | SOT-666 |
| Current - Collector (Ic) (Max) | 1.8 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 900 mW |
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