PBSS5230QAZ
TRANS PNP 30V 2A DFN1010D-3Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia USA Inc. PBSS5230QAZ is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 30V and a continuous collector current capability of up to 2A. It offers a minimum DC current gain (hFE) of 60 at 2A and 2V, with a transition frequency of 170MHz. The Vce(sat) is specified at a maximum of 210mV for 50mA base current and 1A collector current. Power dissipation is rated at 325mW, and it operates at junction temperatures up to 150°C. The device is supplied in a DFN1010D-3 package, featuring an exposed pad for enhanced thermal performance. This transistor is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 210mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2A, 2V |
| Frequency - Transition | 170MHz |
| Supplier Device Package | DFN1010D-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 325 mW |
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