PBSS5220V,115
TRANS PNP 20V 2A SOT666Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia USA Inc. PBSS5220V-115 is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a 20V collector-emitter breakdown voltage and a maximum continuous collector current of 2A. With a transition frequency of 185MHz and a power dissipation of 900mW, it is suitable for use in various industrial and consumer electronics, including power management, battery charging circuits, and low-voltage motor control. The device exhibits a minimum DC current gain (hFE) of 155 at 1A and 2V, with a Vce(sat) of 390mV at 200mA and 2A. Packaged in a SOT-666 surface-mount configuration and supplied on tape and reel, the PBSS5220V-115 operates within an ambient temperature range of -40°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 390mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 155 @ 1A, 2V |
| Frequency - Transition | 185MHz |
| Supplier Device Package | SOT-666 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 900 mW |
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