PBSS4350Z/ZLF
TRANS NPN 50V 3A SOT223Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia USA Inc. PBSS4350Z-ZLF is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 50 V and a continuous collector current capability of 3 A, with a maximum power dissipation of 2 W. The transistor exhibits a transition frequency of 100 MHz, making it suitable for various signal processing and switching tasks. It is provided in a SOT-223 surface-mount package, facilitating efficient board assembly. Key electrical specifications include a saturation voltage (Vce(sat)) of 290 mV at 200 mA collector current and 2 A Ic, and a minimum DC current gain (hFE) of 200 at 1 A Ic and 2 V Vce. The maximum collector cutoff current (ICBO) is 100 nA. Operating temperature range extends to 150°C (TJ). This device finds application in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 290mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-223 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 2 W |
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