PBSS4240V,115
TRANS NPN 40V 2A SOT666Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia USA Inc. PBSS4240V-115 is an NPN bipolar junction transistor designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 2A, with a maximum collector current cutoff of 100nA (ICBO). Its DC current gain (hFE) is a minimum of 300 at 500mA and 5V. The transition frequency is specified at 150MHz. The device dissipates a maximum power of 900mW and operates at junction temperatures up to 150°C. The saturation voltage (Vce Sat) is a maximum of 400mV at 200mA collector current and appropriate base drive. Supplied in a SOT-666 package, it is delivered on tape and reel. This transistor is suitable for various applications in consumer electronics and industrial control systems requiring efficient switching and amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 500mA, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | SOT-666 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 900 mW |
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