PBSS4220V,115
TRANS NPN 20V 2A SOT666Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia USA Inc. PBSS4220V-115 is an NPN bipolar junction transistor designed for surface mount applications. This component features a collector current (Ic) rating of 2 A and a collector emitter breakdown voltage (Vce) of 20 V. With a transition frequency (fT) of 210 MHz and a maximum power dissipation of 900 mW, it offers robust performance. The minimum DC current gain (hFE) is specified at 200 at 1 A and 2 V. The Vce saturation voltage is a maximum of 350 mV at 200 mA and 2 A. The transistor is supplied in a SOT-666 package, presented on tape and reel. This device finds utility in various industrial and consumer electronics applications requiring efficient switching and amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V |
| Frequency - Transition | 210MHz |
| Supplier Device Package | SOT-666 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 900 mW |
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