PBSS4160V,115
TRANS NPN 60V 0.9A SOT666Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia USA Inc. PBSS4160V-115 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 60 V and a continuous collector current capability of 900 mA. With a transition frequency of 220 MHz, it is suitable for operation in various consumer electronics and industrial control systems. The device exhibits a minimum DC current gain (hFE) of 200 at 500 mA and 5 V. It is supplied in a SOT-666 surface mount package, with a maximum power dissipation of 500 mW and an operating junction temperature of 150°C. The Vce(sat) is specified at 250 mV at 100 mA collector current and 1 A base current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 5V |
| Frequency - Transition | 220MHz |
| Supplier Device Package | SOT-666 |
| Current - Collector (Ic) (Max) | 900 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
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