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BC857CW/DG/B2,135

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BC857CW/DG/B2,135

TRANS PNP 45V 0.1A SOT323

Manufacturer: Nexperia USA Inc.

Categories: Single Bipolar Transistors

Quality Control: Learn More

Nexperia USA Inc. PNP Bipolar Junction Transistor, part number BC857CW-DG-B2-135. This device features a collector-emitter breakdown voltage of 45 V and a maximum continuous collector current of 100 mA. The transistor exhibits a transition frequency of 100 MHz and a power dissipation of 200 mW. Minimum DC current gain (hFE) is specified as 420 at 2 mA collector current and 5 V collector-emitter voltage. Collector cutoff current (ICBO) is a maximum of 15 nA. Saturation voltage (Vce(sat)) is a maximum of 600 mV at 5 mA base current and 100 mA collector current. The device is provided in a SOT-323 (SC-70) surface mount package, supplied on tape and reel. This component is commonly utilized in general-purpose amplification and switching applications across various electronic systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA, 5V
Frequency - Transition100MHz
Supplier Device PackageSOT-323
Grade-
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max200 mW
Qualification-

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