BC857CQBZ
TRANS 45V 0.1A DFN1110D-3Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia USA Inc. BC857CQBZ is a bipolar junction transistor (BJT) with a 45V collector-emitter breakdown voltage and a maximum collector current of 100mA. This automotive-grade device features a high DC current gain (hFE) of at least 420 at 2mA and 5V, and a low saturation voltage of 400mV at 5mA and 100mA. The component is housed in a DFN1110D-3 package with wettable flank soldering technology, suitable for surface mounting. It offers a maximum power dissipation of 340mW and an operating temperature range up to 150°C. The BC857CQBZ is AEC-Q101 qualified, making it suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Supplier Device Package | DFN1110D-3 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 340 mW |
| Qualification | AEC-Q101 |
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