BC857C/DG/B3,215
TRANS PNP 45V 0.1A TO236ABManufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia BC857C-DG-B3-215 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a 45V collector-emitter breakdown voltage (Vceo) and a maximum continuous collector current (Ic) of 100 mA. With a transition frequency (fT) of 100 MHz and a power dissipation of 250 mW, it is suitable for various analog and digital circuits. The specified minimum DC current gain (hFE) is 125 at 2 mA collector current and 5V collector-emitter voltage. Its low collector cutoff current (ICBO) is 15 nA. The transistor is housed in a TO-236AB (SC-59) surface-mount package, supplied on tape and reel for automated assembly. Typical applications include signal amplification, switching, and general analog circuit design across industrial and consumer electronics sectors. The Vce(sat) is rated at 650 mV maximum at 5 mA base current and 100 mA collector current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-236AB |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 250 mW |
| Qualification | - |
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