BC857BW/MIF
TRANS PNP 45V 0.1A SOT323Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia USA Inc. BC857BW-MIF is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a maximum collector current (Ic) of 100 mA and a collector-emitter breakdown voltage (Vce) of 45 V. With a transition frequency (fT) of 100 MHz, it is suitable for moderate-frequency circuits. The device offers a minimum DC current gain (hFE) of 220 at 2 mA collector current and 5 V collector-emitter voltage. The power dissipation capability is rated at 200 mW. Packaged in an SOT-323 (SC-70) surface-mount case, the BC857BW-MIF is supplied on tape and reel. This transistor finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-323 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 200 mW |
| Qualification | - |
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