BC857BQBZ
TRANS 45V 0.1A DFN1110D-3Manufacturer: Nexperia USA Inc.
Categories: Single Bipolar Transistors
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Nexperia USA Inc. BC857BQBZ is a high-performance bipolar junction transistor (BJT) designed for demanding applications. This NPN transistor features a 45V collector-emitter breakdown voltage and a maximum collector current of 100 mA, with a power dissipation of 340 mW. The BC857BQBZ offers a minimum DC current gain (hFE) of 200 at 2mA and 5V, and a low collector cutoff current of 15nA (ICBO). Its saturation voltage is a maximum of 400mV at 5mA base current and 100mA collector current. The device is qualified to AEC-Q101 standards and is supplied in a DFN1110D-3 package, featuring wettable flanks for enhanced solder joint reliability in surface mount applications. Operating at temperatures up to 150°C, this component is suitable for automotive and industrial segments. It is provided on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Supplier Device Package | DFN1110D-3 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 340 mW |
| Qualification | AEC-Q101 |
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