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BC857B/DG/B3,215

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BC857B/DG/B3,215

TRANS PNP 45V 0.1A TO236AB

Manufacturer: Nexperia USA Inc.

Categories: Single Bipolar Transistors

Quality Control: Learn More

Nexperia USA Inc. BC857B-DG-B3-215 is a PNP bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. With a transition frequency of 100MHz and a minimum DC current gain (hFE) of 125 at 2mA and 5V, it is suitable for general-purpose amplification and switching. The device offers a maximum power dissipation of 250mW and operates at temperatures up to 150°C. Packaged in a TO-236AB (SC-59) for tape and reel delivery, this transistor finds utility in various consumer electronics and industrial control systems. The Vce saturation is specified at 650mV maximum for 5mA base current and 100mA collector current.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce125 @ 2mA, 5V
Frequency - Transition100MHz
Supplier Device PackageTO-236AB
Grade-
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max250 mW
Qualification-

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